Refractive indices of MBE-grown Al_{x}Ga_{(1-x)}As ternary alloys in the transparent wavelength regi

American Institute of Physics (AIP) | Papatryfonos K, Angelova T, Brimont A, Reid B, Guldin S, et al. | A series of AlxGa(1-x)As ternary alloys were grown by molecular beam epitaxy (MBE) at the te...

28 February 2021

Refractive indices of MBE-grown Al_{x}Ga_{(1-x)}As ternary alloys in the transparent wavelength region

Abstract

A series of AlxGa(1-x)As ternary alloys were grown by molecular beam epitaxy (MBE) at the technologically relevant composition range, x < 0.45, and characterized using spectroscopic ellipsometry to provide accurate refractive index values in the wavelength region below the bandgap. Particular attention is given to O-band and C-band telecommunication wavelengths around 1.3 渭m and 1.55 渭m, as well as at 825 nm. MBE gave a very high accuracy for grown layer thicknesses, and the alloys鈥� precise compositions and bandgap values were confirmed using high-resolution X-ray diffraction (HRXRD) and photoluminescence (PL), to improve the refractive index model fitting accuracy. This work is the first systematic study for MBE-grown AlxGa(1-x)As across a wide spectral range. In addition, we employed a very rigorous measurement-fitting procedure which we present in detail.

Publication Type:	Journal article
Publication Sub Type:	Article
Authors:	Papatryfonos K, Angelova T, Brimont A, Reid B, Guldin S, Smith PR, Tang M, Li K, Seeds A, Liu H,聽Selviah DR
Publisher:	American Institute of Physics
Publication date:	28/02/2021
Pagination	18,21
Journal	AIP Advances
Print ISSN:	2158-3226
Status	Published
Publisher URL
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